Zhangxiankun
|
- Professional Title:Professor
Supervisor of Doctorate Candidates
Discipline:Material Physics and Chemistry
School/Department:前沿交叉科学技术研究院
Administrative Position:前沿交叉科学技术研究院未来芯片二维半导体材料与器件研究中心主任
E-Mail:
Contact Information
No content
- Paper Publications
- H. Yu, Z. Cao, Z. Zhang, X. Zhang*, and Y. Zhang*. Flexible electronics and optoelectronics of 2D van der Waals materials, International Journal of Minerals, Metallurgy and Materials, 2022, DOI: 10.1007/s12613-022-2426-3..
- Wenhui Tang#, X. Zhang#, Huihui Yu, Gao Li, Xiaofu Wei, Mengyu Hong, Qinghua Zhang, Lin Gu, Qingliang Liao, Zhuo Kang, Zheng Zhang*, and Yue Zhang*. A van der Waals ferroelectric tunnel junction for ultrahigh temperature operation memory. Small Methods, 2022, DOI: 10.1002/smtd.202101583.
- Y. Yu#, X. Zhang#, Z. Zhou, Z. Zhang, Y. Bao, H. Xu, L. Lin, Y. Zhang*, and X. Wang*. Microscopic and quantitative characterization of defect in MoS2 monolayer by pump-probe technique. Photonics Research, 2019, 7(7), 711-721..
- B. Liu#, X. Zhang#. J. Du, J. Xiao, H. Yu, M. Hong, L. Gao, Y. Ou, Z. Kang, Q. Liao, Z. Zhang*, and Y. Zhang*, Synergistic-engineered van der Waals photodiodes with high efficiency. InfoMat, 2022, DOI: 10.1002/inf2.12282..
- L. Gao#, Q. Liao#, X. Zhang#, X. Liu, L. Gu, B. Liu, J. Du, Y. Ou, J. Xiao, Z. Kang, Z. Zhang*, and Y. Zhang*. Defect-Engineered atomically thin MoS2 homogeneous electronics for logic inverters. Advanced Materials, 2020, 32(2), 1906646..
- X. Zhang, L. Gao, H. Yu, Q. Liao, Z. Kang, Z. Zhang*, and Y. Zhang*. Single-atom vacancy doping in two-dimensional transition metal dichalcogenides. Accounts of Materials Research 2021, 2(8), 655-668..
- X. Zhang#, Q. Liao#, Z. Kang, B. Liu, Y. Ou, J. Du, J. Xiao, L. Gao, H. Shan, Y. Luo, Z. Fang, P. Wang, Z. Sun, Z. Zhang*, and Y. Zhang*. Self-healing originated van der Waals homojunctions with strong interlayer coupling for high-performance photodiodes. ACS Nano, 2019, 13, 3280-3291. (Supplementary Cover Article).
- X. Zhang#, Huihui Yu#, Wenhui Tang#, Xiaofu Wei, Li Gao, Mengyu Hong, Qingliang Liao, Zhuo Kang, Zheng Zhang*, and Yue Zhang*. All-van-der-Waals barrier-free contacts for high-mobility transistors. Advanced Materials. 2022, DOI:10.1002/adma.202109521..
- X. Zhang#, Z. Kang#, L. Gao#, B. Liu, H. Yu, Q. Liao, Z. Zhang*, Y. Zhang. Molecule-upgraded van der Waals contacts for Schottky-barrier-free electronics. Advanced Materials. 2021, 33(45), 2104935..
- X. Zhang#, Q. Liao#, Z. Kang#, B. Liu, X. Liu, Y. Ou, J. Xiao, J. Du, Y. Liu, L. Gao, L. Gu, M. Hong, H. Yu, Z. Zhang*, X. Duan*, and Y. Zhang*. Hidden vacancy benefit in monolayer 2D semiconductors. Advanced Materials. 2021, 33(7), 2007051..